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A new heterojunction using III-VI lamellar GaTe compound and SnO2 spray is fabricated. The study of I–U characteristics of GaSe–SnO2 and GaTe–SnO2 diodes versus temperature show strong analogy between the modes of conduction in both the devices. From the variation versus temperature of the space charge limited current part of the characteristic, trap activation energies are deduced. Some electroluminescent and photovoltaic effects of these devices are described.
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Gouskov et al. (1978) studied this question.
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