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Cross-sectional observation of the heterointerfaces of a Ga x In1-x As y P1-y active layer clad in InP in a laser diode wafer with x=0.3 and y=0.6 was carried out using an electron microscope. By comparing the image contrasts obtained by high resolution observation and weak beam observation, it is rerealed that if the heterointerface is smooth, high resolution observation can show the interface structure, but a weak beam method is still useful to characterize a heterointerface of relatively large unevenness.
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Kuwano et al. (1988) studied this question.
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