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A dynamic‐single‐mode laser has become important as a light source for optical fiber communications using a 1.5 μm wavelength band, and a surface emitting laser is promising as one of them. However, a good ohmic contact must serve simultaneously as a mirror and it was difficult by a present technique to obtain a reflective mirror with high reflectivity. In this paper, we apply the multilayer heterostructure with the thick ness of quarter wavelength to the surface emitting laser reflector to solve the difficulty. First: (1) we analyzed the semiconductor multilayer DBR by expanding the multilayer film theory to calculate the complex field reflectivity r and obtained the power reflectivity R and the effective optical path length which is practically effective to the DBR laser. Then we clarify the lasing condition of the surface emitting laser using the semiconductor multilayer DBR.
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Morinaga et al. (1986) studied this question.
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