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The intermodulation distortion characteristics of a microwave Si MOSFET power amplifier are improved by realization of a true second harmonic short‐circuit termination of the drain. By the use of a circuit configuration taking account of the parasitic inductance of the FET drain, second harmonic short‐circuiting of the drain is realized. First, a two‐variable Taylor series expansion model of the drain current with respect to the gate voltage and the drain voltage is used and an approximate analysis by the perturbation method, including the low frequency (signal difference frequency) and second harmonic load dependence of the third‐order intermodulation distortion, is used for an analysis of the intermodulation distortion and its asymmetry. Next, a 1‐GHz Si MOSFET power amplifier is fabricated. Reduction of the intermodulation distortion and its asymmetry is realized by introducing a true second harmonic short circuit for the drain.
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Takayama et al. (2007) studied this question.
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