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The effect of evaporated dielectrics on real Ge surfaces has been investigated at 80°K. Using high purity , insulated gate field transistors (MISFET) were made and coated with an evaporated dielectric layer. The number of surface states and the density of states per unit energy have been deduced from the forward transconductance. It has been found that some dielectrics introduce a large number of surface states near the center of the bandgap.
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R.J. Dinger (1976) studied this question.
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