Imaging near-contact transport in the planar-collector geometry for a Schottky contact on high-purity GaAs

Variable temperature electron beam induced current (EBIC) and cathodoluminescence (CL) were combined to image electric fields and charge transport for a Schottky contact on high purity epitaxial GaAs in the planar-collector geometry. Simultaneous EBIC and CL imaging proves that the near-contact EBIC signal is dominated by depletion effects, even in material where the bulk diffusion length greatly exceeds the intercontact distance. In forward bias, an EBIC dipole is observed, providing direct spatial indication of the transition between drift and diffusion transport of locally generated charge.