Deposition of Cathode Coupled Plasma Enhanced Chemical Vapor Deposition SiN Films Using Liquid Source Material

Silicon nitride (SiN) films were prepared using 1,1,1,3,3,3-Hexamethyldisilazane (HMDS) instead of monosilane (SiH 4 ) by the cathode coupled plasma enhanced chemical vapor deposition (PE-CVD). As HMDS and NH 3 were used, SiN film prepared at RF power of 300 W shows high insulation performance, breakdown voltage of which is 7 MV/cm. This value is same as Si 3 N 4 films deposited by thermal CVD. These films can be used for insulating films in various semiconductor devices. In addition, because it has higher optical transparency than SiN films deposited using SiH 4 , it can be used for optical coating films.