Electronic and mechanical properties of carbon nitride films prepared by laser ablation graphite under nitrogen ion beam bombardment

Carbon nitride films have been formed on Si(100) substrates by laser ablation of graphite under a low energy nitrogen ion beam bombardment. Data of Raman shift and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. Time-of-flight measurements suggest the existence of paracyanogen-like materials, such as C4N4, in the films. High energy backscattering spectrometry has shown that the percentage of N content in the film is 41% or so. The x-ray diffraction and transmission electron micrograph measurements have also been taken to characterize the crystal properties of the obtained films. Qualitative tests indicate the films of high Vickers hardness Hv, and of good adhesion to the silicon substrates.