SiGe alloy nanowires (see Figure) have been fabricated using vapor–liquid–solid (VLS) growth with silane (SiH4) and germane (GeH4) gas sources. Growth conditions have been identified that produce nanowires with homogeneous alloy composition with negligible Ge coating on the wire surface. The Ge composition in the nanowire can be controlled by varying the inlet GeH4/(GeH4 + SiH4) gas ratio.
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Lew et al. (2003) studied this question.
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