The separation of two partials of individual extended dislocations in undoped, Si-doped, Zn-doped, and Cr-doped single crystals of GaAs, which are deformed at 723, 823, and 923 K, are measured using the weak-beam technique of electron microscopy and a determination of the stacking-fault energy is made. The average stacking-fault energy determined is (42 ± 7) m Jm−2. No appreciable effects of dopants and the deformation temperature on the stacking-fault energy are observed.
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Nakada et al. (1987) studied this question.
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