We present a model for the radius dependence of the growth velocity of Si nanowires synthesized via the vapor-liquid-solid mechanism. By considering the interplay of the Si incorporation and crystallization rate at steady state conditions we show that the radius dependence of the growth velocity in general depends on the derivatives of the incorporation and crystallization velocity with respect to the supersaturation. Taking this into account, the apparently contradictory experimental observations regarding the radius dependence of the growth velocity can be reconciled and explained consistently.
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Schmidt et al. (2007) studied this question.
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