Vapor-deposited-diamond field emitters are fabricated using diamond film technology compatible with integrated circuit processing. The field emission data from p-type polycrystalline diamond films are presented. Field emission current in the range of 15 μA was detected at an electric field intensity of <20 MV/m at a pressure of 10−7 Torr. A current of approximately 50 nA was observed at a pressure up to 10−2 Torr in H2 environment.
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Hong et al. (1995) studied this question.