Atomic-Layer-Deposited Dielectric Thin Films on a Cu Clad Laminate Substrate for Embedded Metal–Insulator–Metal Capacitor Applications in Printed Circuit Boards

This study examined the interfacial reactions between Cu clad laminate (CCL) substrates and atomic-layer-deposited (ALD) , and films and their effects on the electrical properties of the films. The Cu and Pt substrates with thick sputtered Cu and Pt layers on were also used as references. Serious interfacial reactions, such as defective interfacial layer growth and diffusion into the film, occurred in the ALD films grown on the CCL substrates, which deteriorated electrical properties of the films. Although higher growth temperatures improved the properties of the ALD film due to the lower concentrations of residual impurities in the films, the interfacial reactions became increasingly severe. Conversely the ALD films grown on the CCL substrates showed improved electrical properties as well as suppressed interfacial reactions and a sharp interface with the substrate compared to those of the ALD films. This was confirmed by X-ray photoelectron spectroscopy analysis of ALD , and mixed oxide films. Effective interfacial reaction barrier properties of an ALD film were also demonstrated by an electrical examination of stacked films with and .