It is shown that the new photothermal technique of lock-in rate-window infrared radiometry is capable of completely separating out photoexcited free-carrier-wave and thermal-wave contributions to the photothermal signal from an n-type, Cr-doped Si wafer with a simple experimental procedure, and with superior temporal resolution in the determination of the electronic lifetime and thermal transport time constant.
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Mandelis et al. (1993) studied this question.
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