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The interaction of Ti with C-contaminated Si surfaces has been studied using Auger electron spectroscopy, x-ray photoemission spectroscopy, and transmission electron microscopy. C contamination due to wet chemistry residues and thin SiC films has been investigated. Our results show that Ti reacts with exposed C to produce TiC upon deposition for both these forms of contamination. The C residues were found to neither impede the silicide reaction nor remain at the interface afterwards. However, SiC thin films (5 Å) prepared by annealing the Si surface in ethylene, blocked silicide formation, resulting in a highly nonuniform interface. The carbide phases formed before and after silicide formation agree with those predicted by a calculated Ti-Si-C ternary-phase diagram.
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Taubenblatt et al. (1986) studied this question.
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