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A silicon carbide single crystal has been studied using x-ray photoelectron spectroscopy and x-ray and electron excited Auger spectroscopy. A procedure for producing an atomically clean SiC crystal surface has been perfected. The SiC exhibits prominent bulk plasmon loss features associated with Si and C photoelectrons. This loss, at 22.5 eV, agrees well with optical data establishing the bulk plasmon energy.
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Bozsó et al. (1984) studied this question.
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