The bonding of InP/InGaAsP heterostructures dies onto an SOI substrate is reported. Bonding layer thicknesses down to 200 nm were reproducibly achieved. Bonding was achieved both on unprocessed SOI substrates as on processed SOI substrates containing high index contrast waveguides.
No takes yet. Share an insight, caveat, or question.
Roelkens et al. (2005) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: