Depth Distribution Measurements Using Bombardment‐Enhanced Solubility

A method is described which enables thin, uniform layers to be sectioned off from the surfaces of insulators and semiconductors. It is based on the formation of bombardment‐induced disorder in a layer of definite thickness by low‐energy ion bombardment and subsequent dissolving the disordered layer in a suitable solvent. The thickness of the layer thus removed after various times and conditions of ion bombardment is determined for silicon and mica using neutron activation analysis. The method is applied for determining the depth distribution of radon decay products injected by recoil from a planar radon source into mica.