Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 2, 1999Applied Physics Letters

Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy

View Full Paper
Ask AI
Bookmark
Share

Authors

MSMasatomo SumiyaNational Institute for Materials ScienceMTM. TanakaTokyo Institute of TechnologyKOKohji OhtsukaShizuoka University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sumiya et al. (1999) studied this question.

synapsesocial.com/papers/6a8a4ca4b1e5d05ea8ec9aeehttps://doi.org/10.1063/1.124478
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Inversion domains in GaN grown on sapphire1996 · 205 citations
  2. 2Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates1998 · 82 citations
  3. 3Polarity of GaN Single Crystals Prepared with Na Flux1998 · 23 citations
  4. 4Thermal Stability of Low-Temperature GaN and AlN Buffer Layers During Metalorganic Vapor Phase Epitaxy Monitored by In Situ Shallow-Angle Reflectance Using Ultraviolet Light1998 · 32 citations
  5. 5Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers1996 · 232 citations