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March 1, 1996Japanese Journal of Applied PhysicsOpen Access

Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire

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Authors

SKS. KellerUniversity of California, Santa BarbaraDKD. KapolnekEricsson (Sweden)BKB.P. KellerUniversity of California, Santa Barbara

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Keller et al. (1996) studied this question.

synapsesocial.com/papers/6a8a4cb4ab4588dbccfba15fhttps://doi.org/10.1143/jjap.35.l285
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