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October 1, 1993Journal of Applied Physics

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

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Authors

TLTing LeiBeijing Meteorological BureauKLKarl LudwigBoston UniversityTMT. D. MoustakasBoston University

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Lei et al. (1993) studied this question.

synapsesocial.com/papers/6a895ffc1fe1bad943eb217ehttps://doi.org/10.1063/1.354414
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Also Consider

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  1. 1Growth of GaN by ECR-assisted MBE1993 · 238 citations
  2. 2Epitaxial Growth of Undoped and Mg-Doped GaN1976 · 65 citations
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  4. 4Preparation and Structural Properties of GaN Thin Films1969 · 70 citations