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October 1, 1982Journal of Applied Physics

Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

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SYS. YoshidaThe University of TokyoSMS. MisawaUniversity of Electro-CommunicationsSGS. GondaOsaka Research Institute of Industrial Science and Technology

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Yoshida et al. (1982) studied this question.

synapsesocial.com/papers/6a11fa32ccefb17cd5ccd004https://doi.org/10.1063/1.329998
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