Temperature-dependent Hall measurements of molecular beam epitaxial grown Si-doped AlxGa1−xN for Al mole fraction up to 0.5

Electrical properties of Si-doped AlxGa1−xN films grown on sapphire substrates with AlN buffer layers by gas source molecular beam epitaxy (MBE) have been investigated using temperature dependent Hall-effect measurements. These measurements show that the AlxGa1−xN sapphire interfacial layer significantly affect the electrical properties of the AlxGa1−xN layer doped with Si at a nominal value of 1×1018 cm−3. This study indicates that good quality AlxGa1−xN films can be grown for x⩽0.3 by gas source MBE, but lesser quality films are obtained for x>0.3.