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May 15, 1992Journal of Applied Physics

Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon

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TLTing LeiBeijing Meteorological BureauTMT. D. MoustakasBoston UniversityRGR. J. GrahamSLAC National Accelerator Laboratory

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Lei et al. (1992) studied this question.

synapsesocial.com/papers/6a11fa32ccefb17cd5cccff3https://doi.org/10.1063/1.350642
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