High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1. 1Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition1991 · 174 citations
2. 2Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures1981 · 20 citations
3. 3Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer1990 · 200 citations
4. 4High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface1980 · 70 citations
5. 5Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy1982 · 274 citations