Damage Depth Profiles in Ion-Implanted Silicon by the Photoacoustic Displacement Technique

Damage density measurement for ion-implanted silicon is studied, where the density is measured using Rutherford backscattering spectrometry (RBS) and a newly developed photoacoustic displacement (PAD) technique. Since correlation is obtained between the observed PAD and quantitative damage density in ion-implanted silicon at 150 keV at a dose of 2.0×1015 ions/cm2, damage density can be determined quantitatively from the PAD measurement at the surface. A damage density depth profile can also be obtained using the differential PAD measurement. The observed profile agrees well with the ones of the displaced atom density obtained by RBS measurement and Monte Carlo simulation.