The distinction of different kinds of thermally induced defects in silicon

While thermally induced defects (TID) caused by the action of iron show a formation energy of E = 2.9 eV, TID's annihilating at room temperature has a formation energy of E = (1.2 ± 0.2) eV. Corresponding resistivity measurements with p-type Si of 0.1 to 10 Ωcm were carried out after quenching. The boron concentration being the upper limit for the formation, pair formation of boron with vacancies or Si self-interstitials is supposed to be the reason. Some peculiarities in the behaviour led to a better understanding of oxygen donors.