Using Fourier transform infrared absorption spectroscopy and Hall-effect measurements we have investigated the higher order bands (HOB) in the fast neutron irradiated Czochralski silicon. Introducing the thermal donors (TD) to alter the Fermi level, the defect level giving rise to the HOB is analyzed, which is proposed to be located slightly below the TD(+/++) level. Furthermore, the observation for the characteristics of the photoexcitation and decay of both the HOB and the TD+ supports the assumption that this characteristic of the HOB is associated with a slow relaxation of photoexcited carriers.
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Shi et al. (1994) studied this question.
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