Analysis of Temperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model

T (temperature)- and N s (electron concentration)-dependence of the Hall conductivity in (0↓+) Landau level of n-channel (001) Si MOS inversion layers at 1.5 K ∼12 K in 15 T is analysed based on a mobility edge model. Observations at T ≤2.5 K are reproduced by taking into account N s -dependence of the Landau-level width. A possible way to account for observations at T >2.5 K is to take into account T -dependence of the mobility edge.