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We report the first direct measurements of the strain in a series of In1−xGaxAs/InP structures by ion beam crystallography. A compression strain of 0.0152±0.0008 was obtained for an In0.47Ga0.53As epitaxial layer on an InP substrate compared with an expansion strain of 0.0126±0.0010 for an In0.58Ga0.42As layer structure. The method used allows quantitative strain measurements to be performed without the need for computer simulations.
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Cole et al. (1986) studied this question.
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