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We have fabricated vanadium oxide films by the method of oxidation of evaporated vanadium films, and found it possible to achieve a temperature coefficient of the resistance for a diode structure of 25% and more per degree Celsius—much higher than any previous result. The nature of the contact influences the sensitivity. The structures showed switching behavior, and also in some cases apparent quantum effects. The films are composed of mixed oxides.
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Кузнецов et al. (1996) studied this question.
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