On the dominant recombination level of platinum in silicon

The dominant recombination level of platinum in silicon is calculated by studying the temperature dependence of the space charge generation current of platinum doped diodes and the compensation effects of platinum in silicon. The Shockley-Read-Noyce theory is used in these studies. It is found that the dominant recombination level lies at Ev + 0.42 eV in the silicon band gap. This value is well in agreement with previously reported results.