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December 1, 1968International Journal of Electronics

A direct comparison between three different methods of measuring the minority carrier lifetime in thin silicon slices†

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Authors

RBR.J. BassettMoorfields Eye Hospital NHS Foundation TrustCHC. A. HogarthBrunel University of London

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Cite This Study

Bassett et al. (1968) studied this question.

synapsesocial.com/papers/6a8a690bb1e5d05ea8eca185https://doi.org/10.1080/00207216808938124
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  1. 1The use of P-L-N structures in investigations of transient recombination from high injection levels in semiconductors1963 · 39 citations
  2. 2A novel method for the direct determination of the small signal bulk minority carrier lifetime in the middle region of a semiconductor sandwich†1968 · 1 citations
  3. 3On the Transient Behavior of Semiconductor Rectifiers1955 · 94 citations