The effects of rapid thermal annealing (RTA) on the material properties and on the performance of Pt Schottky barriers on Si are investigated and compared with the effects of corresponding furnace annealings. For fabrication of platinum silicide-silicon Schottky diodes, furnace annealing degrades the minority-carrier diffusion length, while Schottky diodes prepared by RTA have better performance without degradation of the diffusion length.
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C.A. Dimitriadis (1990) studied this question.
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