Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 15, 1980Applied Physics Letters

Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheres

View Full Paper
Ask AI
Bookmark
Share

Authors

CCC. A. CriderIBM (United States)JPJ. M. PoateColorado School of Mines

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Crider et al. (1980) studied this question.

synapsesocial.com/papers/6a9e160540aa4c70decdcfa6https://doi.org/10.1063/1.91522
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Crystallographic aspects of thin PtSi films on Si substrates1974 · 5 citations
  2. 2Interdiffusion and compound formation in thin films of Pd or Pt on si single crystals1971 · 27 citations
  3. 3Kinetics and mechanism of platinum silicide formation on silicon1974 · 161 citations
  4. 4Microstructural and Electrical Properties of Thin PtSi Films and Their Relationships to Deposition Parameters1975 · 46 citations
  5. 5UHV facility for metal–semiconductor thin-film studies1978 · 4 citations