Transparent conductive Cd3TeO6 thin films with perovskite structure

Transparent conductive Cd3TeO6 thin films were deposited by radio-frequency magnetron sputtering using a target composed of CdO and TeO2 powders, and these films’ electrical and optical properties were examined. The electrical resistivity of 1.9×10−2Ωcm and an average transmittance above 85% in the visible region (400–800 nm) were obtained after annealing the film at 500 °C. The film’s carrier density and Hall mobility were 8.7×1019cm−3 and 6.8cm2V−1s−1, respectively. The absorption edge of the films was shifted to a lower wavelength by increasing the carrier density. The maximum band gap of these films was found to be 3.69 eV.