We characterize the performance of photorefractive Sr0.6Ba0.4Nb2O6 under an externally applied voltage. We compared the field dependences of the gain coefficient, response time, sensitivity, and diffraction efficiency with predictions of Kukhtarev’s solution [ Sov. Tech. Phys. Lett.2, 438 ( 1976)] for two-wave interaction, using material parameters obtained at zero voltage. Plane-wave holograms were superimposed in the crystal with angular multiplexing. The hologram capacity (or minimum diffraction efficiency) increased by an order of magnitude with a 15-kV/cm applied field.
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Ford et al. (1992) studied this question.
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