Two-wave mixing and phase conjugation at 830 nm in BaTiO_3

We report two-wave mixing and self-pumped phase-conjugation measurements for GaAlAs laser-diode radiation at 830 nm in BaTiO(3). At 11 degrees C, two-wave mixing gain coefficients as large as 18 cm(-1) and response times of the order of 1 min have been observed by using an optimized mixing geometry. Phase-conjugate reflectivities as large as 56% with 10-sec response times have also been measured using BaTiO(3) in a passive ring conjugator when the source laser is optically isolated from the conjugator. These results represent significant improvements over corresponding values previously reported.