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January 15, 1985Journal of Applied Physics

Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gases

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Authors

SFShizυo FujitaKyoto UniversityTOT. OhishiMitsubishi Group (Japan)HTHideo ToyoshimaOno Clinic

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Cite This Study

Fujita et al. (1985) studied this question.

synapsesocial.com/papers/6a8a744da90c2f4c44fbbdebhttps://doi.org/10.1063/1.334768
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