A novel process for visible light emission from Si has been successfully developed. The sample was irradiated with argon or chlorine ions in an ECR (electron cyclotron resonance) etching apparatus. After etching, the sample was placed in HF solution for 30 minutes. Visible light emission from the sample has been confirmed at a peak wavelength of 700 nm. Various characterizations have been performed, such as SEM and TEM observations, X-ray diffraction and FTIR spectroscopy. Anodized porous silicon is also characterized for comparison.
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Ochiai et al. (1992) studied this question.
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