Total dose and neutron-induced displacement damage effect studies are reported for n-channel, 2- mu m channel length, depletion mode junction-field-effect-transistors (JFETs) fabricated on 6H-silicon carbide. Very little effect was observed on device characteristics for total dose ionizing radiation for doses up to 100 Mrads(Si), but the devices were significantly degraded after a neutron fluence of 10/sup 16/ n/cm/sup 2/. A value of 4.5+or-0.5 carriers/cm/sup 3//neutrons/cm was obtained for the carrier removal rate from neutron irradiation. The results offer promise for SiC devices to be used in applications which combine high-temperature and radiation environments, where the use of Si and GaAs technologies is limited.>
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McGarrity et al. (1992) studied this question.
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