High-field cyclotron resonance and impurity transition inn-type andp-type 3C-SiC at magnetic fields up to 175 T

Magnetotransmission experiments have been carried out on 3C-SiC thin films grown on Si(100) substrates, using the combination of pulsed high magnetic fields up to 175 T generated by the single-turn coil technique and pulsed far-infrared radiations from a H₂O (D₂O) laser at photon energies up to 73.2 meV. In n-type 3C-SiC, two cyclotron-resonance (CR) peaks have been observed for B{∥}k{∥}〈100〉 over a wide range of photon energy 10.4--53.8 meV, corresponding to the light- and heavy-mass valleys at the X points, i.e., mₜ*=(0.25±{}0.01)m₀ and (mₜ*{m}ₗ*)1/2=(0.41±{}0.01)m₀. These values are in agreement with those of Kaplan et al. obtained from CR at low fields. This leads to the conclusion that the conduction band in 3C-SiC is very parabolic up to 53.8 meV, and that unlike GaP the effect of camel's-back structure is unobservable. A number of impurity transitions were observed at temperatures below 100 K with photon energies ranging from 34.4 to 73.2 meV. It was found that the observed lines originate from three different donor states which have different binding energies, Ed=19, 35, and 53 meV. The observation of hole CR was also made in p-type 3C-SiC. A broad but prominent peak was observed with an effective mass of 0.45m₀, at temperatures around 210 K and at a wavelength of 119 {μ}m.