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Measurements have been made of magnetoresistance effects in several relatively pure samples of n-type silicon for the purpose of obtaining information on scattering anisotropies. The results indicate that the ratios of relaxation times parallel and perpendicular to a constant-energy-spheroid axis in the six-valley conduction band of silicon are τIIτ_⊥≈2/3 for acoustic-mode intravalley lattice scattering and τIIτ_⊥>1 for ionized-impurity scattering. Intervalley lattice scattering, important at higher temperatures, is isotropic.
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Long et al. (1960) studied this question.
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