Results of radiation effects and annealing studies are presented for amorphous silicon solar cells from three manufacturers. Data scale well with ionizing dose in many cases for proton, x-ray, and electron irradiation. Significant long-term annealing occurs at room temperature. Results for small-area diodes are in reasonable agreement with findings for monolithic modules. Damage mechanisms in irradiated and illuminated devices are compared.
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Srour et al. (2009) studied this question.
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