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The scope of this paper is to present certain insights and advances towards the synthesis and transistor-level implementation of high dynamic range (> 120 dB), micropower, CMOS Sinh companding filters. In particular, we present detailed technical insights on a recently proposed Sinh integrator which may serve as the basic building block for higher-order filter structures. The particular integrator exhibits a promising simulated linearity performance mainly because it does not rely on the complementarity of both N- and P-type MOS transistors to achieve its Class-AB operation. Rather, it is designed with single-type devices in its signal processing path. The integrator is evaluated through detailed simulation results obtained by performing both large-signal transient and periodic steady-state (PSS) analyses in Cadence IC Design Frameworkregwith the parameters of the commercially available AMS 0.35-mum CMOS process. SNR, SNDR, IP3 and mismatch are some of the performance figures reported in this work. A detailed head-to-head comparison with a typical pseudo-differential Class-AB Log-domain integrator, designed in the same technology and with identical specifications, is also performed in order to reveal any potential benefits of the Sinh circuit paradigm.
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Katsiamis et al. (2008) studied this question.
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