Extreme ultraviolet emission from Xe clusters excited by high-intensity lasers

The property of extreme ultraviolet (EUV) generation from Xe clusters irradiated with intense lasers was studied. The Xe cluster jet was well characterized by the interferometric method. In order to obtain the adequate irradiation condition for strong EUV generation, EUV spectra were taken with various laser systems. Then, the wavelength, the pulse width, and the pump energy were widely varied. Through this survey, even with the comparatively low-density Xe jet of ⩽5×1018 cm−3 average atomic density, the highest conversion efficiency of over 10% from laser energy to EUV (5–18 nm) was obtained with a subpicosecond KrF laser pulse, where a 4π source was assumed. This EUV source is considered to be attractive as an EUV lithography light source because of its low average atomic density and small Xe cluster.