Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures

The microstructure and optical dielectric constants of HfOxNy thin films deposited by using radio frequency reactive magnetron sputtering have been investigated at various substrate temperatures. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between the Si substrate and the HfOxNy thin film during deposition. Spectroscopy ellipsometry (SE) results show that the substrate temperature has a strong effect on physical properties of HfOxNy thin films such as refractive index n and extinction coefficient k. Meanwhile, the optical dielectric functions of the films have determined using SE data and optical absorption properties of HfOxNy thin films deposited at different substrate temperatures have also been studied.