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April 1, 2002Applied Physics Letters

Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing

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BPByoung Keon ParkSeoul National UniversityJPJaehoo ParkSeoul National UniversityMCMoonju ChoMicron (United States)

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Park et al. (2002) studied this question.

synapsesocial.com/papers/6a8a81fc83a8265f5d333eeehttps://doi.org/10.1063/1.1466534
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