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June 12, 2000Applied Physics Letters

Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric

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HJHyung‐Suk JungSamsung (South Korea)KIKiju ImLawrence Berkeley National LaboratoryHHHyunsang HwangPohang University of Science and Technology

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Jung et al. (2000) studied this question.

synapsesocial.com/papers/6a8a823e186271ac9933685ehttps://doi.org/10.1063/1.126729
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