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September 1, 1998IEEE Electron Device Letters

Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics

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Authors

QLQiang LuHuazhong University of Science and TechnologyDPDonggun ParkPukyong National UniversityAKA. KalnitskyTaiwan Semiconductor Manufacturing Company (Taiwan)

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Cite This Study

Lu et al. (1998) studied this question.

synapsesocial.com/papers/6a8a82aea90c2f4c44fbc12dhttps://doi.org/10.1109/55.709635
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  3. 3Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]1996 · 32 citations
  4. 4Effects of post-deposition annealing on the electrical properties and reliability of ultrathin chemical vapor deposited Ta/sub 2/O/sub 5/ films1994 · 20 citations